Description
Main Product Characteristics SSF2319GE 20V P-Channel MOSFET VDSS - 20V RDS(on) 440mΩ (typ.) ID - 400mA .
The SSF2319GE utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating.
Features
* SOT-723
3: Part Marking X: Year Y: Lot
Marking and Pin Assignment
Schematic Diagram
* Advanced trench MOSFET process technology
* Ideal for PWM, load switching and
general power management
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery