RFT080R Features
* For wideband RF applications.
* Excellent insertion loss.
* 75Ω impedance.
* Designed for IR reflow up to 260℃.
* RoHS compliance Electrical Specifications: at 25℃, Operating Temperature 0℃ to +70℃ Part NO Impedance Ratio Pri:Sec Insertion loss M Hz (dB Max.) Hipot Turn R
Datasheet Details
RFT080R, RFT080R-GROUP
GROUP-TEK
109.00 KB
Rf transformers.
This datasheet PDF includes multiple part numbers: RFT080R, RFT080R-GROUP.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
RFT092R BALUN TRANSFORMER (GROUP-TEK)
RFT096AR BALUN TRANSFORMER (GROUP-TEK)
RFT10W Non Inductive Resistors (Futaba Electric)
RFT1150 4 Constant Current RGBW outputs LED Driver (Raffar Technology)
RFT1150 4 Constant Current RGBW outputs LED Driver Brief (Raffar Technology)
RFT1P06E 1.4A/ 60V/ 0.285 Ohm/ ESD Rated/ P-Channel Power MOSFET (Intersil Corporation)
RFT2P03L 2.1A/ 30V/ 0.150 Ohm/ P-Channel Logic Level/ Power MOSFET (Intersil Corporation)
RFT300-CC10G1 LOW-FADE SILICON MOSFET DOSIMETER (REM)
RFT080R Distributor
