GS78116B Datasheet (GSI Technology) - 512K x 16 8Mb Asynchronous SRAM

GS78116B, 512K x 16 8Mb Asynchronous SRAM

Symbol A0 to A18 DQ1 to DQ16 CE WE OE VDD VSS NC 10, 12, 15 ns 3.3 V VDD Description Address input Data input/output Chip enable input Write enable input Output enable input +3.3 V power supply Ground No connect Description The GS78116 is a high speed CMOS static RAM organized as 524,288-words b

GS78116B Features

* Fast access time: 10, 12, 15 ns

* CMOS low power operation: 300/250/220/180 mA at minimum cycle time

* Single 3.3 V ± 0.3 V power supply

* All inputs and outputs are TTL-compatible

* Fully static operation

* Industrial Temperature Option:

* 40