GLA2N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM CORPORATION

Description

Pb Free Plating Product ISSUED DATE :2005/09/14 www.DataSheet4U.com REVISED DATE : G L A2 N 7 0 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON.
The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Dynamic dv/dt Rating.

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Datasheet Specifications

Part number: GLA2N70
Manufacturer: GTM CORPORATION
File Size: 326.90 KB
Datasheet: GLA2N70_GTMCORPORATION.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Sourc

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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GLA2N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM CORPORATION

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