G2309 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

ISSUED DATE :2005/01/17 REVISED DATE : G2309 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 75m -3.7A .
The G2309 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.

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G2309 Datasheet Preview — Preview of G2309 PDF

Datasheet Specifications

Part number: G2309
Manufacturer: GTM
File Size: 316.39 KB
Datasheet: G2309_GTM.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Small Package Outline Package Dimensions TPU.34)QBDLBHF
* Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Operating Junction and Storage T

G2309 Distributors

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G2309 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM G2309-like datasheet