G2314 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Datasheet Details

Part number	G2314
Manufacturer	GTM
File Size	390.16 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	G2314_GTM.pdf

Capable of 2.5V gate drive Low on-resistance

Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @.

📁 G2314 Similar Datasheet

Other Datasheets by GTM

Published: Sep 19, 2007 |