GBAS16 - SWITCHING DIODE
V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A ISSUED DATE :2002/10/28 REVISED DATE :2006/06/06C S U R F A C E M O U N T, S W I T C H I N G D I O D E The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxi
