GC2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/24 REVISED DATE : GC2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID .
Features. Simple Drive Requirement. Fast Switching Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF.

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Datasheet Specifications

Part number: GC2301
Manufacturer: GTM
File Size: 265.31 KB
Datasheet: GC2301_GTM.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Fast Switching Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Ab

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GC2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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