GE15P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GE15P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 210m -16A De.
The GE15P10 (TO-220 package through-hole version) is available for low-profile applications and suited for low voltage applications such as high effic.

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Datasheet Specifications

Part number: GE15P10
Manufacturer: GTM
File Size: 241.86 KB
Datasheet: GE15P10_GTM.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic
* RoHS Compliant Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45

GE15P10 Distributors

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GE15P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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