* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic
* RoHS Compliant Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45
GE15P10
GTM
241.86 KB
P-channel enhancement mode power mosfet.
Pb Free Plating Product
ISSUED DATE :2006/01/19 REVISED DATE :
GE15P10
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-100V 210m
-16A
De.
📁 Related Datasheet
GE15N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
GE10000 NPN POWER TRANSISTOR (GE)
GE10001 NPN POWER TRANSISTOR (GE)
GE10002 NPN POWER TRANSISTOR (GE)
GE10003 NPN POWER TRANSISTOR (GE)
GE10004 NPN POWER TRANSISTOR (GE)
GE10005 NPN POWER TRANSISTOR (GE)
GE10006 NPN POWER TRANSISTOR (GE)
GE10007 NPN POWER TRANSISTOR (GE)
GE10008 NPN POWER TRANSISTOR (GE)
