GE88LS02 Datasheet - GTM

GE88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GE88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 75A The GE88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Low Gate Charge Simple Drive Requirement Fast Switchin.

GE88LS02 Features

* Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source

GE88LS02_GTM.pdf