GE90T03 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Datasheet Details

Part number	GE90T03
Manufacturer	GTM
File Size	313.81 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GE90T03_GTM.pdf

The GE90T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Simple Drive Requirement.
Lower On-resistance.
Fast Switching Characteristic Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS@4.5V VGS ID @TC=25к Continuous Dra.

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Published: Sep 27, 2007 |