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GI3310

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GI3310 Features

* Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Volt

GI3310 General Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150m -10A The GI3310 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage an.

GI3310 Datasheet (273.69 KB)

Preview of GI3310 PDF

Datasheet Details

Part number:

GI3310

Manufacturer:

GTM

File Size:

273.69 KB

Description:

P-channel enhancement mode power mosfet.

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GI3310 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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