GI3310 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

The GI3310 by GTM is a P-CHANNEL ENHANCEMENT MODE POWER MOSFET. Below is the official datasheet preview.

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GI3310 P-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Official preview page of the **GI3310** P-CHANNEL ENHANCEMENT MODE POWER MOSFET datasheet (GTM).

Datasheet Details

Part number	GI3310
Manufacturer	GTM
File Size	273.69 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI3310_GTM.pdf
Additional preview pages of the GI3310 datasheet.

GI3310 Product details

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150m -10A The GI3310 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.The through-hole version (TO-251) is available for low-profile applications and suited for low voltage and battery power applications. Simple Drive Requirement 2.5V Gate Drive Capability

Features

Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -20 ±12 -10 -6.2 -24 25 0.01 -55 ~ +.

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Published: Sep 4, 2007 |