GI60L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/22 REVISED DATE :2005/12/12B GI60L02 .
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 13m 50A The GI60L02 provide the designer with the best combination of fast switching,.

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Datasheet Specifications

Part number: GI60L02
Manufacturer: GTM
File Size: 268.88 KB
Datasheet: GI60L02_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80

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