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GI90T03 Datasheet - GTM

GI90T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 5m 75A The GI90T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and su.

GI90T03 Features

* Simple Drive Requirement

* Lower On-resistance

* Fast Switching Characteristic Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.

GI90T03 Datasheet (304.61 KB)

Preview of GI90T03 PDF

Datasheet Details

Part number:

GI90T03

Manufacturer:

GTM

File Size:

304.61 KB

Description:

N-channel enhancement mode power mosfet.

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GI90T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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