GJ5706 NPN HIGH SPEED SWITCHING TRANSISTOR

GTM

Description

www.DataSheet4U.com ISSUED DATE :2005/05/06 REVISED DATE : GJ5706 .
Features NPN EPITAXIAL PLANAR SILICON TRANSISTOR The GJ5706 is designed high current switching applications. Large current capacitance. Low.

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Datasheet Specifications

Part number: GJ5706
Manufacturer: GTM
File Size: 957.66 KB
Datasheet: GJ5706_GTM.pdf
Description: NPN HIGH SPEED SWITCHING TRANSISTOR

Applications

* Large current capacitance
* Low collector-to-emitter saturation voltage
* High-speed switching
* High allowable power dissipation Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L

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