GJ88LS02 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GJ88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GJ88LS02

Datasheet Details

Part number	GJ88LS02
Manufacturer	GTM
File Size	266.18 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GJ88LS02 Datasheet
Additional preview pages of the GJ88LS02 datasheet.

Product details

Description

The GJ88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. Low Gate Charge Simple Drive Requirement Fast Switching

Features

Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 75 62.

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Published: Sep 5, 2007 |