GJ88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GJ88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) I.
The GJ88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.

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Datasheet Specifications

Part number: GJ88LS02
Manufacturer: GTM
File Size: 266.18 KB
Datasheet: GJ88LS02_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Vol

Applications

* and suited for low voltage applications such as DC/DC converters.
* Low Gate Charge
* Simple Drive Requirement

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GJ88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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