GLBCP56 NPN EPITAXIAL SILICON TRANSISTOR

GTM

Description

ISSUED DATE :2002/11/20 REVISED DATE :2006/01/02D GLBCP56 .
Features N P N S I L I C O N E P I TA X I A L T R A N S I S T O R The GLBCP56 is designed for use in audio amplifiers and medium power amplification.

📥 Download Datasheet

GLBCP56 Datasheet Preview — Preview of GLBCP56 PDF

Datasheet Specifications

Part number: GLBCP56
Manufacturer: GTM
File Size: 205.63 KB
Datasheet: GLBCP56_GTM.pdf
Description: NPN EPITAXIAL SILICON TRANSISTOR

Features

* N P N S I L I C O N E P I TA X I A L T R A N S I S T O R The GLBCP56 is designed for use in audio amplifiers and medium power amplifications. Collector-Emitter Voltage: VCEO=80V Complementary to GLBCX53 Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

GLBCP56 Distributors

📁 Related Datasheet

GLBCSC08 GLB2500 GLB2820 GLB2855 GLB2885

📌 All Tags

GLBCP56 NPN EPITAXIAL SILICON TRANSISTOR GTM

GTM GLBCP56-like datasheet

GLBCP69

GLBCX53