GP9962 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/08/08 REVISED DATE : GP9962 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID .
The GP9962 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectivenes.

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Datasheet Specifications

Part number: GP9962
Manufacturer: GTM
File Size: 362.88 KB
Datasheet: GP9962_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions D GAUGE PLANE E REF. A A1 A2 b b1 b2 b3 c A Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 SEATI

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

GP9962 Distributors

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GP9962 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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