GSD1857 NPN EPITAXIAL PLANAR TRANSISTOR

GTM

Description

www.DataSheet4U.com ISSUED DATE :2003/10/22 REVISED DATE :2004/11/29B GSD1857 POWER TRANSISTOR N P N E P I TA X I A L P L A N A R T R A N S I S T O .

📥 Download Datasheet

GSD1857 Datasheet Preview — Preview of GSD1857 PDF

Datasheet Specifications

Part number: GSD1857
Manufacturer: GTM
File Size: 148.61 KB
Datasheet: GSD1857_GTM.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR

Features

* High breakdown voltage. (BVCEO=120V).
* Low collector output capacitance. (Type.20pF at VCB=10V)
* High transition frequency. (fT=80MHz) Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

GSD1857 Distributors

📁 Related Datasheet

GSD101AWS GSD103ATW GSD107WS GSD10V45S GSD1N4148 GSD1N4148W

📌 All Tags

GSD1857 NPN EPITAXIAL PLANAR TRANSISTOR GTM

GTM GSD1857-like datasheet