GTS217E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Datasheet Details

Part number	GTS217E
Manufacturer	GTM
File Size	312.87 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GTS217E_GTM.pdf

Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 20 ±12 7 5.7 30 1.5 0.012 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Line.

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Published: Oct 5, 2007 |