GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 22m 7A .
Features Package Dimensions REF.

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Datasheet Specifications

Part number: GTS217E
Manufacturer: GTM
File Size: 312.87 KB
Datasheet: GTS217E_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continu

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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