GTS6923 P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/05/04 REVISED DATE : GTS6923 P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET BVDSS RDS(ON).
The GTS6923 provides the designer with the best combination of fast switching, ultra low on-resistance and cost-effectiveness. Low on-resistance.

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Datasheet Specifications

Part number: GTS6923
Manufacturer: GTM
File Size: 359.65 KB
Datasheet: GTS6923_GTM.pdf
Description: P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

Features

* Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gat

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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GTS6923 P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET GTM

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