GTT6405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

Pb Free Plating Product ISSUED DATE :2007/01/17 REVISED DATE : GTT6405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 52m -5.0A Des.
The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change.

📥 Download Datasheet

GTT6405 Datasheet Preview — Preview of GTT6405 PDF

Datasheet Specifications

Part number: GTT6405
Manufacturer: GTM
File Size: 312.73 KB
Datasheet: GTT6405-GTM.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Lower Gate Charge
* RoHS Compliant
* Small Footprint & Low Profile Package Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Power Dissipation Linear Derating Factor Ope

GTT6405 Distributors

📁 Related Datasheet

GTTQ57SN761E0 GTTV57NN771E0 GTTY43SP7F1R0

📌 All Tags

GTT6405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM GTT6405-like datasheet