GTT6405 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Datasheet Details

Part number	GTT6405
Manufacturer	GTM
File Size	312.73 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GTT6405-GTM.pdf

The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change.

Lower Gate Charge.
RoHS Compliant.
Small Footprint & Low Profile Package Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A A1.

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Published: Aug 26, 2024 |