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GU90N03 Datasheet - GTM

GU90N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/24 REVISED DATE : GU90N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 4m 85A The GU90N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Simple Drive Requi.

GU90N03 Features

* Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 0˚ 8˚ 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage G

GU90N03_GTM.pdf

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Datasheet Details

Part number:

GU90N03

Manufacturer:

GTM

File Size:

356.74 KB

Description:

N-channel enhancement mode power mosfet.

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GU90N03 GU90N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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