GSP-830 Datasheet, manual equivalent, GW Instek

PDF File Details

Part number:

GSP-830

Manufacturer:

GW Instek

File Size:

4.42MB

Download:

📄 Datasheet

Description:

3.0ghz spectrum analyzer user manual.

TAGS

GSP-830

GW Instek

📁 Related Datasheet

GSP202U - SWITCHING DIODE (GTM)
.. ISSUED DATE :2004/09/24 REVISED DATE : GSP202U Description S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 0.

GSP652535 - Battery / cell (GREAT POWER)
PRODUCT Ver: A SPECIFICATION DATE: 2011-09-30 DOC No: ER-652535-A-0001 For Any Detial and question, Please Tel Engineer: 86(0)756-6229769 FAX: 86(.

GSPS13 - Schottky Barrier Rectifier (GOOD-ARK)
GSPS13 Schottky Barrier Rectifier Reverse Voltage 30 V Forward Current 1.0 A Features ■ Super Low VF Schottky recitifer ■ Low profile, typical thickn.

GS-065-004-1-L - 650V E-mode GaN transistor (GaN Systems)
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.

GS-065-004-6-L - 700V E-mode GaN transistor (GaN Systems)
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 31.

GS-065-008-1-L - 650V E-mode GaN transistor (GaN Systems)
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 22.

GS-065-008-6-L - 700V E-mode GaN transistor (GaN Systems)
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 16.

GS-065-011-1-L - 650V E-mode GaN transistor (GaN Systems)
GS-065-011-1-L 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • B.

GS-065-011-2-L - 650V E-mode GaN transistor (GaN Systems)
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • .

GS-065-011-6-L - 700V E-mode GaN transistor (GaN Systems)
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 12.