• Part: TBL130P04-3DL8
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 589.62 KB
Download TBL130P04-3DL8 Datasheet PDF
Galaxy Microelectronics
TBL130P04-3DL8
Features - Super low gate charge - Green device available - Excellent cd V / dt effect decline - Advanced high cell density trench technology - Halogen free - Qualified to AEC-Q101 standards for high reliability Mechanical Data - Case: PDFN3×3-8L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number TBL130P04-3DL8 Package PDFN3×3-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 130P04 Maximum Ratings (@ TA = 25℃ unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (VGS=10V, TC = 25°C) Continuous Drain Current (VGS=10V, TC = 100°C) Pulsed Drain Current- 2 - 4 Single Pulse Avalanche Energy - 3 Symbol VDSS VGSS IDM EAS Value -40 ±20 -49 -31 -268 125 Unit V V A A A m J Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Air - 1 Thermal...