TBL130P04-3DL8 Datasheet - Galaxy Microelectronics

TBL130P04-3DL8 - P-Channel Enhancement Mode MOSFET

TBL130P04-3DL8 Features

* Super low gate charge

* Green device available

* Excellent cdV / dt effect decline

* Advanced high cell density trench technology

* Halogen free

* Qualified to AEC-Q101 standards for high reliability Mechanical Data

* Case: PDFN3×3-8L

* Molding Compound: UL Flammab

Datasheet Details

TBL130P04-3DL8

Galaxy Microelectronics

589.62 KB

P-channel enhancement mode mosfet.

TBL130P04-3DL8 Distributor

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