GE5N20V - N-Channel MOSFET

GE5N20V Datasheet Preview — Preview of GE5N20V PDF

Datasheet Details

Part number	GE5N20V
Manufacturer	Gemos
File Size	301.50 KB
Description	N-Channel MOSFET
Datasheet	GE5N20V_Gemos.pdf

GE5N20V Product details

Description

The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.
VDS = 20V,ID = 5A Marking and pin Assignment.

📁 GE5N20V Similar Datasheet

GE5062 - 20 Ampere NPN Darlington Power Transistors (Intersil)
GE50L02 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)

Other Datasheets by Gemos

Published: Feb 19, 2009 |