GE5N20V N-Channel MOSFET

Description

GEMOS www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSISTOR .
The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore.

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Datasheet Specifications

Part number: GE5N20V
Manufacturer: Gemos
File Size: 301.50 KB
Datasheet: GE5N20V_Gemos.pdf
Description: N-Channel MOSFET

Features

* RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package

Applications

* Battery protection
* Load switch
* Power management TSSOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 5N20V Device GE5N20V Package TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted) Parameter Drai

GE5N20V Distributors

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GE5N20V N-Channel MOSFET Gemos

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