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1N1183 - Silicon Standard Recovery Diode

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 50 to 300 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183 thru 1N1187R VRRM = 50 V - 300 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current.

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Datasheet Details

Part number 1N1183
Manufacturer GeneSiC
File Size 697.84 KB
Description Silicon Standard Recovery Diode
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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 to 300 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183 thru 1N1187R VRRM = 50 V - 300 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.
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