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1N4588 - Silicon Standard Recovery Diode

Features

  • High Surge Capability.
  • Types from 200 V to 800 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N4588(R) thru 1N4593(R) VRRM = 200 V - 800 V IF =150 A DO-8 Package AC CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N4588(R) 1N4590(R) 1N4592(R) 1N4593(R) Unit Repetitive peak reverse voltage DC.

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Datasheet Details

Part number 1N4588
Manufacturer GeneSiC
File Size 1.71 MB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N4588 Datasheet
Additional preview pages of the 1N4588 datasheet.

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Other Datasheets by GeneSiC
  • 1N4588R - Silicon Standard Recovery Diode
  • 1N4590 - Silicon Standard Recovery Diode
  • 1N4590R - Silicon Standard Recovery Diode
  • 1N4592 - Silicon Standard Recovery Diode
  • 1N4592R - Silicon Standard Recovery Diode
  • 1N4593 - Silicon Standard Recovery Diode
  • 1N4593R - Silicon Standard Recovery Diode
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Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 200 V to 800 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N4588(R) thru 1N4593(R) VRRM = 200 V - 800 V IF =150 A DO-8 Package AC CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N4588(R) 1N4590(R) 1N4592(R) 1N4593(R) Unit Repetitive peak reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave I2t for fusing Operating temperature Storage temperature VRRM VDC IF IF,SM I2t Tj Tstg TC ≤ 110 °C TC = 25 °C, tp = 8.
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