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1N4596 - Silicon Standard Recovery Diode

This page provides the datasheet information for the 1N4596, a member of the 1N4594 Silicon Standard Recovery Diode family.

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 1000 V to 1400 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N4594(R) thru 1N4596(R) VRRM = 1000 V - 1400 V IF =150 A DO-8 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N4594(R) 1N4595(R) 1N4596(R) Repetitive peak reverse voltage DC blocking voltage Continuous for.

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Datasheet preview – 1N4596

Datasheet Details

Part number 1N4596
Manufacturer GeneSiC
File Size 698.66 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N4596 Datasheet
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Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 1000 V to 1400 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N4594(R) thru 1N4596(R) VRRM = 1000 V - 1400 V IF =150 A DO-8 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N4594(R) 1N4595(R) 1N4596(R) Repetitive peak reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave I2t for fusing Operating temperature Storage temperature VRRM VDC IF IF,SM I2t Tj Tstg TC ≤ 110 °C TC = 25 °C, tp = 8.
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