A-GA10JT12 Super Junction Transistor

GeneSiC

Description

Device under development A-GA10JT12 Normally * OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 V = 7A = 220 mȍ Featu.

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Datasheet Specifications

Part number: A-GA10JT12
Manufacturer: GeneSiC
File Size: 775.58 KB
Datasheet: A-GA10JT12-GeneSiC.pdf
Description: Super Junction Transistor

Features

* 225 oC maximum operating temperature
* Best in class temperature independent switching and blocking performance
* Lowest VDS(ON) as compared to any other SiC switch
* Suitable for connecting an anti-parallel diode
* Gate oxide free SiC switch
* Posit

Applications

* Ideal for Aerospace and Defense Applications
* Down Hole Oil Drilling, Geothermal Instrumentation
* Hybrid Electric Vehicles (HEV)
* Solar Inverters
* Switched-Mode Power Supply (SMPS)
* Power Factor Correction (PFC)
* Induction Heating

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A-GA10JT12 Super Junction Transistor GeneSiC

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