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GA05JT12-263 Junction Transistor

GA05JT12-263 Description

GA05JT12-263   Normally * OFF Silicon Carbide Junction Transistor .

GA05JT12-263 Features

* Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A
* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC switch
* Suitable for connecting an anti-parallel diode
* Positive temperature coefficient for easy paralleling
* Low

GA05JT12-263 Applications

* SiC transistor most compatible with existing Si gate-drivers
* Low switching losses
* Higher efficiency
* High temperature operation
* High short circuit withstand capability Absolute Maximum Ratings
* Down Hole Oil Drilling, Geothermal Instrumentation
* Hybrid Electr

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Datasheet Details

Part number
GA05JT12-263
Manufacturer
GeneSiC
File Size
731.17 KB
Datasheet
GA05JT12-263-GeneSiC.pdf
Description
Junction Transistor

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Junction Transistor GeneSiC
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