GA05JT12-263 - Junction Transistor
GA05JT12-263 Features
* Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A
* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC switch
* Suitable for connecting an anti-parallel diode
* Positive temperature coefficient for easy paralleling
* Low
