Part number:
GA05JT12-263
Manufacturer:
GeneSiC
File Size:
731.17 KB
Description:
Junction transistor.
* Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A
* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC switch
* Suitable for connecting an anti-parallel diode
* Positive temperature coefficient for easy paralleling
* Low
GA05JT12-263 Datasheet (731.17 KB)
GA05JT12-263
GeneSiC
731.17 KB
Junction transistor.
📁 Related Datasheet
GA05JT12-247 Normally - OFF Silicon Carbide Junction Transistor (GeneSiC)
GA05JT01-46 Junction Transistor (GeneSiC)
GA05JT03-46 Junction Transistor (GeneSiC)
GA0007-AL Flyback Transformer (Coilcraft)
GA01PNS100-CAL Silicon Carbide PiN Diode Chip (GeneSiC)
GA01PNS100-CAU Silicon Carbide PiN Diode Chip (GeneSiC)
GA01PNS150-201 Silicon Carbide PiN Diode (GeneSiC)
GA01PNS150-220 Silicon Carbide PiN Diode (GeneSiC)
GA01PNS150-CAU Silicon Carbide PiN Diode Chip (GeneSiC)
GA01PNS80-CAL Silicon Carbide PiN Diode Chip (GeneSiC)