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GA05JT12-263 Datasheet - GeneSiC

Junction Transistor

GA05JT12-263 Features

* Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A

* 175 °C maximum operating temperature

* Temperature independent switching performance

* Gate oxide free SiC switch

* Suitable for connecting an anti-parallel diode

* Positive temperature coefficient for easy paralleling

* Low

GA05JT12-263 Datasheet (731.17 KB)

Preview of GA05JT12-263 PDF

Datasheet Details

Part number:

GA05JT12-263

Manufacturer:

GeneSiC

File Size:

731.17 KB

Description:

Junction transistor.

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TAGS

GA05JT12-263 Junction Transistor GeneSiC

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