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GB50SLT12-247

Silicon Carbide Schottky Diode

GB50SLT12-247 Features

* High Avalanche (UIS) Capability

* Enhanced Surge Current Capability

* Superior Figure of Merit QC/IF

* Low Thermal Resistance

* 175 °C Maximum Operating Temperature

* Temperature Independent Switching Behavior

* Positive Temperature Coefficie

GB50SLT12-247 Datasheet (512.14 KB)

Preview of GB50SLT12-247 PDF

Datasheet Details

Part number:

GB50SLT12-247

Manufacturer:

GeneSiC

File Size:

512.14 KB

Description:

Silicon carbide schottky diode.

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TAGS

GB50SLT12-247 Silicon Carbide Schottky Diode GeneSiC

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