GB50SLT12-247 - Silicon Carbide Schottky Diode

GeneSiC

Datasheet Details

Part number	GB50SLT12-247
Manufacturer	GeneSiC
File Size	512.14 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GB50SLT12-247-GeneSiC.pdf

High Avalanche (UIS) Capability.
Enhanced Surge Current Capability.
Superior Figure of Merit QC/IF.
Low Thermal Resistance.
175 °C Maximum Operating Temperature.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient of VF.
Extremely Fast Switching Speeds Package VRRM IF (Tc = 135°C) QC = 1200 V = 103 A = 199 nC 2 1 TO-247-2L Advantages.
Low Standby Power Losses.
Improved Circuit.

📁 GB50SLT12-247 Similar Datasheet

Other Datasheets by GeneSiC

Published: Feb 14, 2019 |