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MBRH12020 - Silicon Power Schottky Diode

GeneSiC

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Datasheet Details

Part number	MBRH12020
Manufacturer	GeneSiC
File Size	494.36 KB
Description	Silicon Power Schottky Diode
Datasheet	MBRH12020-GeneSiC.pdf

MBRH12020 Product details

Features

High Surge Capability.
Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 136 °C TC = 25 °C, tp = 8.3 ms Conditions MBRH120.

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Published: Feb 12, 2014 |