2N3670
General Semiconductor
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(2n3670 - 2n3668) 12.5a silicon controlled rectifiers.
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📁 Related Datasheet
2N3670 - Thyristors
(RCA)
File No. 116
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Solid State Division
Thyristors
2N3668 2N3670 2N3669 2N4103
All-Diffused SCR's for Low-Cost Power-Control and Power-Switching.
2N3670 - (2N3668 - 2N3670) SILICON CONTROLLED RECTIFIER
(Central Semiconductor)
..
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
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2N3670 - SILICON CONTROLLED RECTFIERS
(Digitron Semiconductors)
2N3668-2N3670, 2N4103
High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTFIERS
FEATURES Available as “.
2N3676 - Bipolar NPN Device
(Seme LAB)
..
2N3676
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically seale.
2N3677 - PNP/NPN Switching Transistor
(TELEDYNE)
.
2N3677 - LOW POWER CHOPPER TRANSISTOR
(Motorola)
2N3677
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Co Hector- Base Voltage
Emitter-Base Voltage
— Collector Current Continuous
@ Total Device Di.
2N3600 - Silicon Planar NPN Transistor
(STMicroelectronics)
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its R.
2N3600 - RF Power Transistors
(RCA)
File No. 83 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
ffilrnLJD
Solid State Division
RF Power Transistors 2N918 2N3600
RCA-2N9.
2N3611 - PNP germanium power transistors
(Motorola)
2N3611 3614 thru 2N
(GERMANIUM) PNP germanium power transistors
for switching and amplifier applications.
CASE 11
(TO-3)
CASE 4-04
(TO-41)
MAXIMU.
2N3612 - PNP germanium power transistors
(Motorola)
2N3611 3614 thru 2N
(GERMANIUM) PNP germanium power transistors
for switching and amplifier applications.
CASE 11
(TO-3)
CASE 4-04
(TO-41)
MAXIMU.
