GF6968A Common-Drain Dual N-Channel MOSFET

General Semiconductor

GF6968A Description

www.DataSheet4U.com GF6968A Common-Drain Dual N-Channel MOSFET H C EN ET R T ENF G TSSOP-8 0.122 (3.10) 0.114 (2.90) 8 5 0.177 (4.50) 0.170 (4.30) .

GF6968A Features

* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for Li-ion battery packs use

GF6968A Applications

* Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)(1) Pulsed Drain Current Maximum Power Dissipation(1) TA = 25°C TA = 70°C (1) A = 25°C unless otherwise noted) Symbol VDS VGS ID IDM PD TJ, Tstg RθJA Limit 20 ±

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Datasheet Details

Part number: GF6968A
Manufacturer: General Semiconductor
File Size: 178.78 KB
Datasheet: GF6968A_GeneralSemiconductor.pdf
Description: Common-Drain Dual N-Channel MOSFET

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Common-Drain Dual N-Channel MOSFET General Semiconductor

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