Datasheet4U Logo Datasheet4U.com

G901

3.3 V 300MA LOW DROPOUT REGULATOR

G901 Features

* Dropout voltage typically 0.45V @ IO = 300mA

* Output current in excess of 300mA

* Output voltage accuracy +3%

* Quiescent current, typically 0.6mA

* Internal short circuit current limit

* Internal over temperature protection Applications

* C

G901 Datasheet (155.87 KB)

Preview of G901 PDF

Datasheet Details

Part number:

G901

Manufacturer:

Global Mixed-mode Technology

File Size:

155.87 KB

Description:

3.3 v 300ma low dropout regulator.

📁 Related Datasheet

G90 - Relay (Global Components)
G90 n Features n Typical Applications • Switching capacity up to 30A, • Power switching 240VAC in miniature construction • Various contact arrang.

G9001 - 500mA Low-Dropout Linear Regulators (Global Mixed-mode Technology)
Global Mixed-mode Technology G9001 500mA Low-Dropout Linear Regulators Features „ Low, 100µA No-Load Supply Current „ 500mA Output Current Limit Mi.

G9002 - 300mA Low-Dropout Linear Regulators (Global Mixed-mode Technology)
Global Mixed-mode Technology Inc. G9002 300mA Low-Dropout Linear Regulators Features „ Low, 100µA No-Load Supply Current „ Guaranteed 300mA Output .

G900P15 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G900P15D5 P-Channel Enhancement Mode Power MOSFET Description The G900P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate .

G900P15D5 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G900P15D5 P-Channel Enhancement Mode Power MOSFET Description The G900P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate .

G900P15M - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G900P15M P-Channel Enhancement Mode Power MOSFET Description The G900P15M uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G900P15T - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G900P15T P-Channel Enhancement Mode Power MOSFET Description The G900P15T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G9012 - PNP EPITAXIAL TRANSISTOR (GTM)
.. ISSUED DATE :2004/11/18 REVISED DATE : G9012 Description P N P E PI TA XI A L T R AN S I S TO R The G9012 is designed for use i.

TAGS

G901 3.3 300MA LOW DROPOUT REGULATOR Global Mixed-mode Technology

Image Gallery

G901 Datasheet Preview Page 2 G901 Datasheet Preview Page 3

G901 Distributor