* The MCIRF4N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters
MCIRF4N65
Global Semiconductor
2.19 MB
Power mosfet.
MCIRF4N65 MFIRF4N65 MKIRF4N65 MJIRF4N65 ID = 4A VDS = 650V RDS(on)MAX = 2.3Ω Major Ratings and Characteristics Characteristics Values Units IDS .
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