MJIRF6N70 POWER MOSFET

Global Semiconductor

Description

MJIRF6N70 ID = 6A VDS = 700V RDS(on)MAX = 1.65Ω Major Ratings and Characteristics Characteristics Values Units ID 6.0 A IDM 24 A VDS 700 V VGS .
Features The MJIRF6N70 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

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Datasheet Specifications

Part number: MJIRF6N70
Manufacturer: Global Semiconductor
File Size: 538.81 KB
Datasheet: MJIRF6N70-GlobalSemiconductor.pdf
Description: POWER MOSFET

Applications

* are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
* 150℃ Tj operation
* Low Power Loss & Low cost
* Fast Switching
* RoHS Compliant Case Styles Ordering Information Part Number MJIRF6N70 1、 GATE 2、 DRAIN 3、 SOURCE Package TO-251 Pack

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