GSM3112Z Datasheet - Globaltech

GSM3112Z 30V N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM3112Z Features

* 30V, 12.6A, RDS(ON)=10mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* DC-DC Converters

* Power Management Functions Packages & Pin Assignments GSM3112ZF (DFN3X3-8L) GSM3112ZF

GSM3112Z-Globaltech.pdf

GSM3112Z Datasheet Preview — Preview of GSM3112Z PDF

Datasheet Details

Part number:

GSM3112Z

Manufacturer:

Globaltech

File Size:

532.18 KB

Description:

30v n-channel mosfets.

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GSM3112Z GSM3112Z 30V N-Channel MOSFETs Globaltech

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