A1SHB Datasheet, mosfet equivalent, H&M Semiconductor

A1SHB Features

• Mosfet
• VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
• High power and current handing capability
• Lead free product is acquired

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Part number:

A1SHB

Manufacturer:

H&M Semiconductor

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803.79kb

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📄 Datasheet

Description:

P-channel trench power mosfet. The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

A1SHB Application

• Applications General Features
• VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
• High power and curr

TAGS

A1SHB

H&M Semiconductor

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