A1SHB

P-Channel Trench Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number:

A1SHB

Manufacturer:

H&M Semiconductor

File Size:

803.79 KB

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Description:

P-channel trench power mosfet.
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench techno.
The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operat.

✔ A1SHB Features

VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
High power and current handing capability
Lead free product is acquired
Surface moun

✔ A1SHB Application

General Features
VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
High pow

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A1SHB P-Channel Trench Power MOSFET H&M Semiconductor

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