A1SHB - P-Channel Trench Power MOSFET

Datasheet Summary

Description

The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment.

H&M Semiconductor

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Datasheet Details

Part number	A1SHB
Manufacturer	H&M Semiconductor
File Size	803.79 KB
Description	P-Channel Trench Power MOSFET
Datasheet	A1SHB Datasheet
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Full PDF Text Transcription

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.

Published: Jan 2, 2017 |