HM12N02D
FEATURES
- Trench FET Power MOSFET
- Small package DFNWB2×2-6L-J
MARKING:
APPLICATION
- Load Switch for Portable Applications
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Para meter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID Continuous Drain Current (note 1) IDM Collector Current-Pulse(Note3)
RθJA Thermal Resistance from Junction to Ambient (note 2) Tj Junction Temperature
Tstg Storage Temperature TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Value 20 ±10 12 40 167 150
-55~+150 260
Unit V V A A
℃/W ℃ ℃ ℃
026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID...
