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HM12N20D - N-Channel Enhancement Mode Power MOSFET

HM12N20D Description

HM1' N-Channel Enhancement Mode Power MOSFET .
The HM1' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM12N20D Features

* VDS =200V,ID =A RDS(ON) < 80mΩ @ VGS=10V (Typ:63mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolog

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Datasheet Details

Part number
HM12N20D
Manufacturer
H&M Semiconductor
File Size
380.47 KB
Datasheet
HM12N20D-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM12N20D-like datasheet

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