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HM15N25F Datasheet - H&M Semiconductor

HM15N25F N-channel Enhanced VDMOSFET

VDSS 250 V HM15N25F, the silicon N-channel Enhanced VDMOSFETs, is ID 15 A obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 W conduction loss, improve switching performance and enhance RDS(ON)Typ 0.18 Ω the avalanche energy. The transistor can be used in .

HM15N25F Features

* Fast Switching

* Low ON Resistance(Rdson≤0.47Ω) Marking and pin assignment

* 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS dv/dt a2 PD TJ，T

HM15N25F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM15N25F

Manufacturer:

H&M Semiconductor

File Size:

725.24 KB

Description:

N-channel enhanced vdmosfet.

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HM15N25F HM15N25F N-channel Enhanced VDMOSFET H&M Semiconductor

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