HM15N25F N-channel Enhanced VDMOSFET

H&M Semiconductor

Description

HM1) General .
VDSS 250 V HM15N25F, the silicon N-channel Enhanced VDMOSFETs, is ID 15 A obtained by the self-aligned planar Technology which reduce the PD.

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Datasheet Specifications

Part number: HM15N25F
Manufacturer: H&M Semiconductor
File Size: 725.24 KB
Datasheet: HM15N25F-HMSemiconductor.pdf
Description: N-channel Enhanced VDMOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤0.47Ω) Marking and pin assignment

Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS dv/dt a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Peak Diode Rec

HM15N25F Distributors

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HM15N25F N-channel Enhanced VDMOSFET H&M Semiconductor

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