HM180N02 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM180N02 N-Channel Enhancement Mode Power MOSFET .
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM180N02
Manufacturer: H&M Semiconductor
File Size: 370.40 KB
Datasheet: HM180N02-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =20V,ID =185A RDS(ON)

HM180N02 Distributors

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HM180N02 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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