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HM18DP02Q Datasheet - H&M Semiconductor

HM18DP02Q - P-Channel Enhancement Mode Field Effect Transistor

* Trench Power MV MOSFET technology * High density cell design for Low RDS(ON) * High Speed switching Applications * Battery protection * Load switch * Power management * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-so

HM18DP02Q-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM18DP02Q

Manufacturer:

H&M Semiconductor

File Size:

908.97 KB

Description:

P-channel enhancement mode field effect transistor.

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