HM18DP02Q P-Channel Enhancement Mode Field Effect Transistor

H&M Semiconductor

Description

HM18DP02Q P-Channel Enhancement Mode Field Effect Transistor DFN3.3X3.3 Product Summary * VDS * ID * RDS(ON)( at VGS= -4.5V) * RDS(.
Trench Power MV MOSFET technology. High density cell design for Low RDS(ON). High Speed switching Applications. Battery protecti.

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Datasheet Specifications

Part number: HM18DP02Q
Manufacturer: H&M Semiconductor
File Size: 908.97 KB
Datasheet: HM18DP02Q-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Applications

* Battery protection
* Load switch
* Power management
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -20 V Gate-source Voltage VGS Drain Current B TA=25℃ @ Steady State TA=100℃ @ Steady State ID Drain Cu

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HM18DP02Q P-Channel Enhancement Mode Field Effect Transistor H&M Semiconductor

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