HM18DP02Q
Description
- Trench Power MV MOSFET technology
- High density cell design for Low RDS(ON)
- High Speed switching
Applications
- Battery protection
- Load switch
- Power management
- Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Maximum
Unit
Drain-source Voltage
-20
Gate-source Voltage
Drain Current B
TA=25℃ @ Steady State TA=100℃ @ Steady State
Drain Current B
TA=25℃ @ Steady State TA=70℃ @ Steady State
Pulsed Drain Current A
±10
-18
-12.6
-18 -16.2
-55
Single Pulse Avalanche Energy B
Total Power Dissipation B
TA=25℃ @ Steady State TA=100℃ @ Steady...
