Part number:
HM18DP02Q
Manufacturer:
H&M Semiconductor
File Size:
908.97 KB
Description:
P-channel enhancement mode field effect transistor.
Datasheet Details
* Trench Power MV MOSFET technology * High density cell design for Low RDS(ON) * High Speed switching Applications * Battery protection * Load switch * Power management * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-so
Datasheet Details
HM18DP02Q
H&M Semiconductor
908.97 KB
P-channel enhancement mode field effect transistor.
📁 Related Datasheet
📌 All Tags