HM18DP02Q - P-Channel Enhancement Mode Field Effect Transistor

H&M Semiconductor

HM18DP02Q Datasheet Preview — Preview of HM18DP02Q PDF

Datasheet Details

Part number	HM18DP02Q
Manufacturer	H&M Semiconductor
File Size	908.97 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	HM18DP02Q-HMSemiconductor.pdf

HM18DP02Q Product details

Description

Trench Power MV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -20 V Gate-source Voltage VGS Drain Current B TA=25℃ @ Steady State TA=100℃ @ Steady State ID Drain Current B TA=25℃ @ Steady State TA=70℃ @ Steady State ID Pulsed Drain C

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Published: Jun 30, 2025 |