This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices
HM18N50F Features
* - 18A, 500V, RDS(on)typ. = 236mΩ@VGS = 10 V - Low gate charge ( typical 69nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt
Datasheet Details
HM18N50F, HM18N50A
H&M Semiconductor
0.96 MB
500v n-channel mosfet.
This datasheet PDF includes multiple part numbers: HM18N50F, HM18N50A.
Please refer to the document for exact specifications by model.
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