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HM18N50F, HM18N50A 500V N-Channel MOSFET

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Description

HM18N50A / HM18N50F 500V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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This datasheet PDF includes multiple part numbers: HM18N50F, HM18N50A. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
HM18N50F, HM18N50A
Manufacturer
H&M Semiconductor
File Size
0.96 MB
Datasheet
HM18N50A-HMSemiconductor.pdf
Description
500V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: HM18N50F, HM18N50A.
Please refer to the document for exact specifications by model.

Features

* - 18A, 500V, RDS(on)typ. = 236mΩ@VGS = 10 V - Low gate charge ( typical 69nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

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