HM18N50F, HM18N50A - 500V N-Channel MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM18N50F, HM18N50A
Manufacturer	H&M Semiconductor
File Size	0.96 MB
Description	500V N-Channel MOSFET
Datasheet	HM18N50A-HMSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HM18N50F, HM18N50A. Please refer to the document for exact specifications by model.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 18A, 500V, RDS(on)typ. = 236mΩ@VGS = 10 V - Low gate charge ( typical 69nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.

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Published: Jul 1, 2025 |