HM2809D 60V P-Channel power field effect transistors

H&M Semiconductor

Description

HM2809D P-Channel 60V(D-S) GENERAL .
The HM2809D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: HM2809D
Manufacturer: H&M Semiconductor
File Size: 1.01 MB
Datasheet: HM2809D-HMSemiconductor.pdf
Description: 60V P-Channel power field effect transistors

Features

* RDS(ON)≦188mΩ@VGS=-10V
* RDS(ON)≦266mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability

Applications

* Power Management
* Portable Equipment
* Battery Powered System
* Load Switch Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings -60 ±20 Unit V V DFN 2x2 Package S1 G1 D2 Pin 1 Pin 1 Top

HM2809D Distributors

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HM2809D 60V P-Channel power field effect transistors H&M Semiconductor

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