HM2809D
DESCRIPTION
The HM2809D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
- RDS(ON)≦188mΩ@VGS=-10V
- RDS(ON)≦266mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Capable doing Cu wire bonding
APPLICATIONS
- Power Management
- Portable Equipment
- Battery Powered System
- Load Switch
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
-60
±20
Unit V V
DFN 2x2 Package S1 G1 D2
Pin 1
Pin 1 Top
D1 G2 S2 Bottom
Schematic diagram
Jun, 2013-Ver1.1
P-Channel 60V(D-S)
Electrical Characteristics (Tj =25℃ Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC V(BR)DSS VGS(th) IGSS IDSS
RDS(ON)
Drain-Source...
