HM4N10D N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N-Channel Enhancement Mode Power MOSFET .
The HM4N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM4N10D
Manufacturer: H&M Semiconductor
File Size: 750.89 KB
Datasheet: HM4N10D-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =100V,ID =4A RDS(ON)

HM4N10D Distributors

📁 Related Datasheet

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HM4N10D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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