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HM4N70F N-channel Enhanced VDMOSFET

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Description

+01) General .
HM4N70F the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swit.

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Datasheet Specifications

Part number
HM4N70F
Manufacturer
H&M Semiconductor
File Size
555.05 KB
Datasheet
HM4N70F-HMSemiconductor.pdf
Description
N-channel Enhanced VDMOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-

HM4N70F Distributors

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N-channel Enhanced VDMOSFET H&M Semiconductor
H&M Semiconductor HM4N70F-like datasheet