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HM4N70F Datasheet - H&M Semiconductor

HM4N70F N-channel Enhanced VDMOSFET

HM4N70F the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HM4N70F Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

HM4N70F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM4N70F

Manufacturer:

H&M Semiconductor

File Size:

555.05 KB

Description:

N-channel enhanced vdmosfet.

HM4N70F Distributor

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HM4N70F HM4N70F N-channel Enhanced VDMOSFET H&M Semiconductor