HM90N07D
Description
The HM90N07D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Features
- VDS=70V；ID=90A@ VGS=10V； RDS(ON)=7.5mΩ(Typ) @ VGS=10V
- Special Designed for E-Bike Controller Application
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
Application
- 48V E-Bike Controller Applications
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
TO-263-2L top view
Schematic diagram
VDSS = 70V IDSS = 90A RDS(ON) = 4.8mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-263-2L
Reel Size
- Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC) IDM (pluse)
Drain Current (DC) at Tc=100℃ Drain Current-Continu...
